Doping in III V Semiconductors Book

Doping in III V Semiconductors

  • Author : E. Fred Schubert
  • Publisher : E. Fred Schubert
  • Release Date : 2015-08-18
  • Genre: Science
  • Pages : null
  • ISBN 10 : 9780986382635

Doping in III V Semiconductors Excerpt :

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the expe

Topics in Growth and Device Processing of III V Semiconductors Book

Topics in Growth and Device Processing of III V Semiconductors

  • Author : S. J. Pearton
  • Publisher : World Scientific
  • Release Date : 1996
  • Genre: Technology & Engineering
  • Pages : 546
  • ISBN 10 : 9810218842

Topics in Growth and Device Processing of III V Semiconductors Excerpt :

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Doping in III V Semiconductors Book

Doping in III V Semiconductors

  • Author : E. F. Schubert
  • Publisher : Cambridge University Press
  • Release Date : 1993-09-30
  • Genre: Science
  • Pages : 632
  • ISBN 10 : 0521419190

Doping in III V Semiconductors Excerpt :

Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.

Delta doping of Semiconductors Book

Delta doping of Semiconductors

  • Author : E. F. Schubert
  • Publisher : Cambridge University Press
  • Release Date : 1996-03-14
  • Genre: Science
  • Pages : 604
  • ISBN 10 : 0521482887

Delta doping of Semiconductors Excerpt :

Doping profiles are a key element in the development of modern semiconductor technology. This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory chapter sets out the basic theoretical and experimental concepts involved, the authors discuss the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth. They then present the techniques for characterizing doping distributions, followed by several chapters on the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering.

Rare Earth and Transition Metal Doping of Semiconductor Materials Book

Rare Earth and Transition Metal Doping of Semiconductor Materials

  • Author : Volkmar Dierolf
  • Publisher : Woodhead Publishing
  • Release Date : 2016-01-23
  • Genre: Science
  • Pages : 470
  • ISBN 10 : 9780081000601

Rare Earth and Transition Metal Doping of Semiconductor Materials Excerpt :

Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics

Atomic Diffusion in III V Semiconductors Book

Atomic Diffusion in III V Semiconductors

  • Author : Brian Tuck
  • Publisher : CRC Press
  • Release Date : 2021-05-31
  • Genre: Science
  • Pages : 236
  • ISBN 10 : 9781000447965

Atomic Diffusion in III V Semiconductors Excerpt :

III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

Spin Electronics Book

Spin Electronics

  • Author : David D. Awschalom
  • Publisher : Springer Science & Business Media
  • Release Date : 2013-06-29
  • Genre: Science
  • Pages : 198
  • ISBN 10 : 9789401705325

Spin Electronics Excerpt :

The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.

Shallow Level Centers in Semiconductors Book

Shallow Level Centers in Semiconductors

  • Author : C A J Ammerlaan
  • Publisher : World Scientific
  • Release Date : 1997-04-19
  • Genre: Uncategoriezed
  • Pages : 552
  • ISBN 10 : 9789814546676

Shallow Level Centers in Semiconductors Excerpt :

This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications. Contents:Resonant Polaron Effect of Shallow Indium Donors in CdTe (M Grynberg et al.)Shallow Electronic Traps Associated With Hydrogen Complexes in Crystalline Silicon (A N Safonov et al.)Zeeman Spectroscopy of Neutral Copper and a Copper Related Acceptor in Germanium (R E M Vickers & P Fisher)Excited States of the Vacancy in Diamond: Shallow States of a Deep Defect (A M Stoneham & A Mainwood)Shallow Donor in Spherical Quantum Antidots (R Buczko & F Bassani)Shallow Centers in Heavily Doped Silicon Quantum Wells (W Gehlhoff et al.)Shallow Thermal Donor Defects in Silicon (C P Ewels et al.)and other papers Readership: Researchers in semiconductors, experimental physics, condensed matter/solid state physics, theoretical physics and materials science. keywords:

Physical Properties of III V Semiconductor Compounds Book
Score: 4
From 1 Ratings

Physical Properties of III V Semiconductor Compounds

  • Author : Sadao Adachi
  • Publisher : John Wiley & Sons
  • Release Date : 1992-11-10
  • Genre: Technology & Engineering
  • Pages : 318
  • ISBN 10 : 0471573299

Physical Properties of III V Semiconductor Compounds Excerpt :

This study explores the key properties of III-V compounds and presents the various material parameters and constants of these semiconductors for a number of research applications. The experimental and theoretical data has been summarized in tabular, graphical and functional formats.

Defects in Optoelectronic Materials Book

Defects in Optoelectronic Materials

  • Author : Kazumi Wada
  • Publisher : CRC Press
  • Release Date : 2001-11-06
  • Genre: Science
  • Pages : 379
  • ISBN 10 : 9056997149

Defects in Optoelectronic Materials Excerpt :

Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.

III   V Compound Semiconductors and Devices Book

III V Compound Semiconductors and Devices

  • Author : Keh Yung Cheng
  • Publisher : Springer Nature
  • Release Date : 2020-11-08
  • Genre: Technology & Engineering
  • Pages : 537
  • ISBN 10 : 9783030519032

III V Compound Semiconductors and Devices Excerpt :

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Epitaxy of Semiconductors Book

Epitaxy of Semiconductors

  • Author : Udo W. Pohl
  • Publisher : Springer Science & Business Media
  • Release Date : 2013-01-11
  • Genre: Technology & Engineering
  • Pages : 325
  • ISBN 10 : 9783642329708

Epitaxy of Semiconductors Excerpt :

Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.